Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5436906
Kind Code:
B2
Abstract:
A method of producing a semiconductor device includes: a dicing step of dicing a wafer member using a dicing blade to form a cut portion in the wafer member, in which the wafer member is formed of a wafer portion, a glass substrate, and an adhesive layer for bonding the wafer portion and the glass substrate in a thickness direction of the wafer member so that the cut portion penetrates the wafer portion and the adhesive layer and reaches a part of the glass substrate; and an individual piece dividing step of dividing the wafer member into a plurality of semiconductor devices with the cut portion as a fracture initiation portion.
Inventors:
Yoshihiro Saeki
Application Number:
JP2009077566A
Publication Date:
March 05, 2014
Filing Date:
March 26, 2009
Export Citation:
Assignee:
LAPIS Semiconductor Co., Ltd.
International Classes:
H01L21/301; B28D1/24; B28D5/00
Domestic Patent References:
| JP56116639A | ||||
| JP57018370A | ||||
| JP60055640A | ||||
| JP4199848A | ||||
| JP5206483A | ||||
| JP8064556A | ||||
| JP2002270543A | ||||
| JP2001135598A | ||||
| JP2006021315A | ||||
| JP2006086509A | ||||
| JP2006108245A | ||||
| JP2006150499A | ||||
| JP2006258546A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda