Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6958791
Kind Code:
B2
Abstract:
This method for manufacturing a semiconductor device includes: (I) a step in which a first protective film forming film 20 provided, in the following order, with a first support sheet 23 and a thermosetting resin layer 25 is bonded to the surface of a semiconductor wafer 10 provided with bumps 11, with the thermosetting resin layer 25 acting as the bonding surface; (II) a step in which the first support sheet 23 is detached from the thermosetting resin layer 25; (III) a step in which the thermosetting resin layer 25 is heated and cured, and a protective film is formed; and (IV) a step in which the semiconductor wafer 10 is diced together with the thermosetting resin layer or the protective film.
Inventors:
Masanori Yamagishi
Akinori Sato
Yoshio Arai
Akinori Sato
Yoshio Arai
Application Number:
JP2020123598A
Publication Date:
November 02, 2021
Filing Date:
July 20, 2020
Export Citation:
Assignee:
LINTEC CORPORATION
International Classes:
H01L21/60; B32B18/00; H01L23/00; H01L23/29; H01L23/31
Domestic Patent References:
| JP2005028734A | ||||
| JP2012244115A | ||||
| JP2012028404A | ||||
| JP2012169484A | ||||
| JP2001326246A | ||||
| JP2015095499A |
Foreign References:
| WO2013133015A1 | ||||
| WO2015162808A1 |
Attorney, Agent or Firm:
Tamotsu Otani
Arinaga Shun
Arinaga Shun