To provide a manufacturing method of a semiconductor gas rate sensor, in which superior airtight can be maintained, no squeeze-out of adhesive occurs, accurate sticking of chips can be performed and high productivity can be obtained.

The method has a step (ST13) of pressurizing an adhesive impregnated material 45 containing an adhesive on a jointing surface of a second Si wafer 24 to apply the adhesive on the jointing surface, a jointing surface mating step (ST14) of reading a first alignment mark 28 of a first Si wafer 23 and a second alignment mark 29 of the wafer 24 by transmitting infrared rays, aligning the marks 28, 29 on prescribed positions and mating the jointing surface of the wafer 23 with the jointing surface of the wafer 24, and a step (ST15) of curing an adhesive layer to form a gas path of a gas flow.