MANUFACTURING METHOD OF SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER OBTAINED BY SAID METHOD

Title:

MANUFACTURING METHOD OF SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER OBTAINED BY SAID METHOD

Document Type and Number:

Japanese Patent JP3206059

Kind Code:

B2

Abstract:

PURPOSE: To make it easy to grow an epitaxial layer on the projected section on a compound semiconductor substrate.
CONSTITUTION: One conductivity type clad layer 2, an active layer 3, another conductivity type clad layer 4, and a block layer 5 are formed on a projected section by MOVPE method. As a result, epitaxial growth is made easy, and furthermore the manufacturing yield can be improved.

More Like This:

WO/2023/117592	LASER COMPONENT WITH MULTIPLE LASER DIODES AND A MONOLITHIC BEAM COMBINER
JP2629190	PROBLEM TO BE SOLVED: To manufacture a semiconductor laser.
JP2000252582	LIGHT EMITTING ELEMENT

Inventors:

Tomoki Murakami

Application Number:

JP34069591A

Publication Date:

September 04, 2001

Filing Date:

December 24, 1991

Export Citation:

Click for automatic bibliography generation Help

Assignee:

Kansai NEC Corporation

International Classes:

H01S5/00; H01S5/042; H01S5/227; (IPC1-7): H01S5/227

Domestic Patent References:

JP3225883A
JP6432692A

Previous Patent: It closes and is a bag of an ingredient integral type.

Next Patent: PICTURE EDITING DEVICE