To provide a manufacturing method of a semiconductor light-emitting device which has a high carrier concentration and low contact resistance with metal, in which diffusion of metal into a semiconductor is suppressed, and which is excellent in light-extraction efficiency and luminous efficiency.

A manufacturing method of a semiconductor light-emitting element, comprises: a process of growing on a semiconductor substrate, an n-type semiconductor layer, an active layer and a p-type conductor layer each of which has a composition (Al_yGa_1-y)_xIn_1-xP, and a carbon-doped Ga_1-zIn_zP contact layer; a process of forming a dielectric layer having an opening, on the contact layer; a process of forming a metal electrode layer on the dielectric layer and the opening; a process of forming a first bonding metal layer on the metal electrode layer; a heat treatment process of forming an ohmic contact between the contact layer exposed from the opening and the metal electrode layer; and a process of bonding, by using a support medium in which a second boding metal layer is formed on a support substrate, the first and second bonding metal layers by thermocompression. A carrier concentration of the contact layer is 5×10¹⁹ cm^-3 or over and a temperature in the heat treatment process is 400°C or under.