Title:
半導体薄膜の製造方法
Document Type and Number:
Japanese Patent JP4568000
Kind Code:
B2
Abstract:
A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
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Inventors:
Mutsuko Hatano
Shinya Yamaguchi
Hongo Mikio
Akio Yazaki
Takeshi Noda
Shinya Yamaguchi
Hongo Mikio
Akio Yazaki
Takeshi Noda
Application Number:
JP2004087493A
Publication Date:
October 27, 2010
Filing Date:
March 24, 2004
Export Citation:
Assignee:
Hitachi Displays Co., Ltd.
International Classes:
G02F1/1368; H01L21/20; H01L21/336; H01L21/66; H01L21/77; H01L21/84; H01L27/12; H01L29/786
Domestic Patent References:
| JP2005197544A | ||||
| JP2002305146A | ||||
| JP6291035A | ||||
| JP2000114174A | ||||
| JP2001308009A | ||||
| JP2001110861A | ||||
| JP2002110695A | ||||
| JP10144621A | ||||
| JP3097219A |
Attorney, Agent or Firm:
Yoji Onodera