Title:
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2007019160
Kind Code:
A
Abstract:
To provide a method capable of obtaining a desired 4H silicon carbide single crystal by controlling the transformation of crystal polymorph.
The manufacturing method of a silicon carbide single crystal is to subject a silicon carbide single crystal to vapor phase epitaxy by bringing Si containing stock gas and C containing stock gas to reaction on a seed crystal substrate. In the method, the seed crystal is a 15R silicon carbide single crystal, and the 4H silicon carbide single crystal is subjected to vapor phase epitaxy by bringing the Si containing stock gas and the C containing stock gas to reaction at a temperature of 1,700°C or higher with a C/Si ratio of 1.0 or less.
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Inventors:
SHINTANI RYOCHI
Application Number:
JP2005197590A
Publication Date:
January 25, 2007
Filing Date:
July 06, 2005
Export Citation:
Assignee:
TOYOTA MOTOR CORP
International Classes:
H01L21/205; C23C16/42; C30B29/36
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama
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