Title:
基板処理装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7103696
Kind Code:
B2
Abstract:
Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.
Inventors:
Hirotetsu Shimada
Uemura
Uemura
Application Number:
JP2021044934A
Publication Date:
July 20, 2022
Filing Date:
March 18, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC Inc.
International Classes:
H01L21/31; C23C16/455; H01L21/318
Domestic Patent References:
| JP2014236129A | ||||
| JP2009206489A |
Foreign References:
| WO2015041376A1 |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazuho
Hiroshi Fukuda
Kato Kazuho
Hiroshi Fukuda
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