Title:
MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2760717
Kind Code:
B2
Abstract:
PURPOSE: To prevent contamination due to the deposition of a material and with possible free particles of the material by introducing an auxiliary gas in a reactor chamber, so that the gas pressure at an open coupling is equal approximately to the pressure in a process space for staying the process gas.
CONSTITUTION: An auxiliary gas 11 is fed into a reactor chamber, so as to realize equal gas pressure at an open coupling 9 to the gas pressure in a process space 8, wherein a process gas 5 is approximately stationary to form a so-called staying layer and can be actually used completely for a layer 6 with comparatively little consumption of the gas, thus comparatively lowering the cost for purifying the process gas itself and exhaust gas.
Inventors:
VISSER JAN (NL)
Application Number:
JP27731392A
Publication Date:
June 04, 1998
Filing Date:
October 15, 1992
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
International Classes:
C23C16/54; C23C16/455; C30B25/14; H01L21/31; C23C16/44; (IPC1-7): H01L21/31; C23C16/54
Domestic Patent References:
| JP63246829A |
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)
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