Title:
マスクブランク基板の製造方法、マスクブランクの製造方法及び転写用マスクの製造方法
Document Type and Number:
Japanese Patent JP6411046
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of producing a mask blank substrate which reduces the in-plane defect removal distribution in a wet etching process for reducing foreign matter defects of a mask blank substrate to improve efficiency of the wet etching process.SOLUTION: In wet-etching a first principal surface 101, or the front surface side, of a mask blank substrate 100 by injecting an etching liquid 201, the temperature of the wet etching liquid is adjusted to be higher than ordinary temperature before injection, and the liquid 202 with the temperature adjusted to be higher than ordinary temperature is supplied to a second principal surface 102, or the back surface side, of the mask blank substrate. Preferably, the temperature difference between the liquid 202 with the temperature adjusted to be higher than ordinary temperature and the etching liquid 201 is adjusted to ±10°C or smaller.
Inventors:
Takeyuki Yamada
Osamu Hanaoka
Kazuaki Harada
Osamu Hanaoka
Kazuaki Harada
Application Number:
JP2014061500A
Publication Date:
October 24, 2018
Filing Date:
March 25, 2014
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/60; B08B1/00; B08B3/04; B08B3/08; B08B3/10; B08B3/12; C03C15/00; G03F1/82
Domestic Patent References:
| JP2005221928A | ||||
| JP8037143A |
Foreign References:
| US20070068558 |
Attorney, Agent or Firm:
Hiroshi Oshino
Takafumi Oshima
Takafumi Oshima