Title:
MASK FOR PRODUCING GARNET OPTICAL WAVEGUIDE AND PRODUCTION OF GARNET OPTICAL WAVEGUIDE
Document Type and Number:
Japanese Patent JPH0588031
Kind Code:
A
Abstract:
PURPOSE:To obviate the peeling of a silicon nitride mask film and to suppress the deterioration in the characteristics of a garnet material by forming the oxide of silicon and nitride of silicon respectively having specific film thicknesses on a crystal having a garnet structure. CONSTITUTION:A silicon oxide film 1-2 (10 to 2000Angstrom film thickness) is provided between a garnet material substrate 1-1 and the silicon nitride mask film 1-3 (100 to 30000Angstrom film thickness). Namely, the silicon oxide film 1-2 which is the oxide similar to the garnet material and is the silicon compd. similar to the silicon nitride is used as the intermediate layer between the garnet material substrate 1-1 and the silicon nitride mask film 1-3, by which the adhesive force of the garnet material substrate 1-1 and the silicon nitride mask film 1-3 is increased and the generation of the peeling of the mask film is obviated. The deterioration in the characteristics of the garnet material can be suppressed by minimizing the time for exposing the garnet material to oxygen atmosphere at the time of forming the silicon oxide film 1-2 which is the intermediate layer.
Inventors:
TATE AKIYUKI
SUGIMOTO NAOTO
SHIBUKAWA ATSUSHI
MINO SHINJI
SUGIMOTO NAOTO
SHIBUKAWA ATSUSHI
MINO SHINJI
Application Number:
JP24728391A
Publication Date:
April 09, 1993
Filing Date:
September 26, 1991
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G02B6/13; G02B6/12; (IPC1-7): G02B6/12
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)
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