Title:
MASK TO BE USED FOR MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
Document Type and Number:
Japanese Patent JP2005141228
Kind Code:
A
Abstract:
To improve the manufacture of a microstructure component by microlithography so as to control the projection light incident to a photoresist to be linearly polarized, and to provide a means which can avoid undesirable changes in the width of a structure due to a vector effect.
The mask 20 to be used for a microlithography projection exposure apparatus 10 is provided with a pattern of an opaque material 32. An intermediate space 36, 36' remaining in the structure 32c is filled with a liquid or solid dielectric material 38, 38'. Thereby, polarization dependence of diffraction efficiency is increased so that the mask can be used as a polarizer.
Inventors:
TOTZECK MICHAEL
GRUNER TORALF
HETZLER JOCHEN
GRUNER TORALF
HETZLER JOCHEN
Application Number:
JP2004321931A
Publication Date:
June 02, 2005
Filing Date:
November 05, 2004
Export Citation:
Assignee:
ZEISS CARL SMT AG
International Classes:
G02F1/13; G03B27/42; G03C5/00; G03F1/00; G03F7/20; G03F9/00; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Shigeki Yamakawa