PURPOSE: To form a pattern having a desired line width and shape positively on a transferred plate, and to prevent damage by giving a substrate protective film resistance to the etching of a support frame.

CONSTITUTION: The title mask has a substrate 12 consisting of an SiN film through which X-rays are transmitted, a substrate protective film 13 applied onto the back of the substrate 12 and composed of an SiC film through which X-rays are transmitted, first thin-film patterns 14 formed onto the surface of the substrate 12 and made up of Cr, x-ray absorptive patterns 15 shaped onto the first thin-film patterns 14 and consisting of Ta, support frames 16 formed to sections in the vicinity of the outer circumference of the back of the substrate protective film 13 and composed of aluminoborosilicate glass, and etching preventive films 17 made up of SiC films applied onto the rear of the support frames 16. The substrate 12 and the substrate protective film 13 constitute an X-ray transmitting substrate 18 through which X-rays are transmitted, and the support frames 16 support and reinforce the X-ray transmitting substrate 18. Accordingly, a pattern having desired line width can be transferred positively onto a plate to be transferred, and damage is prevented.