Title:
MATERIAL FOR FORMATION OF ORGANIC SEMICONDUCTOR LAYER
Document Type and Number:
Japanese Patent JP2014110347
Kind Code:
A
Abstract:
To provide an organic semiconductor material which includes a dithienobenzo dithiophene derivative, and enables the improvement of organic transistor's electrical properties including a carrier mobility and a current ON/OFF ratio.
A material for formation of an organic semiconductor layer is a liquid solution of which organic solvent includes a dithienobenzo dithiophene derivative expressed by the general formula (1) below. The material has a moisture concentration of 200 ppm or less. [Chem 1] (In the formula, substituent groups R1 and R2 may be identical to or different from each other, and each represent an alkyl group having 4-8 carbon atoms.)
Inventors:
FUKUDA TAKASHI
WATANABE MASATO
WATANABE MASATO
Application Number:
JP2012264560A
Publication Date:
June 12, 2014
Filing Date:
December 03, 2012
Export Citation:
Assignee:
TOSOH CORP
International Classes:
H01L51/30; H01L29/786; H01L51/05; H01L51/40; H01L51/42; H01L51/50; H05B33/10; C07D495/22
Domestic Patent References:
| JP2012209329A | 2012-10-25 | |||
| JP2011134757A | 2011-07-07 | |||
| JP2004063978A | 2004-02-26 | |||
| JP2009054810A | 2009-03-12 | |||
| JP2011526588A | 2011-10-13 | |||
| JP2012206952A | 2012-10-25 | |||
| JP2012206953A | 2012-10-25 |
Other References:
PENG GAO: "Dithieno[2,3-d;20,30-d0]benzo[1,2-b;4,5-b0]dithiophene(DTBDT) as Semiconductor for High-Performance,", ADV. MATER., vol. 21, JPN6015047912, 2009, pages 213 - 216, XP002635532, ISSN: 0003476156, DOI: 10.1002/adma.200802031