PURPOSE: To enable a fine exact pattern to be easily formed without causing charging up by preparing the fine pattern-forming material made of a mixture of a polymer to be polymerized or decomposed by irradiation with ionized beams and a conductive polymer.
CONSTITUTION: The fine pattern-forming material to be used as an electron beam resist is prepared by mixing the conductive polymer with the polymer to be polymerized or decomposed by irradiation with ionized beams, thus permitting the obtained electron beam resist to have high conductivity, so to prevent charging up during exposure, and to form an exact fine resist pattern freed of butting errors and deviation from an alignment due to the charging up, and a multilayer resist to be easily formed without attaching an aluminum layer by using these conductive polymers for the upper layer of the multilayer resist.
KOIZUMI TAICHI
KAWAKITA KENJI
NOMURA NOBORU
| JPS6381424A | 1988-04-12 | |||
| JPS62113136A | 1987-05-25 | |||
| JPS60103342A | 1985-06-07 | |||
| JPS59107347A | 1984-06-21 | |||
| JPS5993441A | 1984-05-29 | |||
| JPS58105227A | 1983-06-23 | |||
| JPS4730214A |