To provide a thermal-spraying deposit having a low porosity and a high aluminum nitride content since thermal-spraying deposit of aluminum nitride excellent in thermal conductivity and insulating properties is desired to be formed on members for electrostatic chucks, heaters, and plasma-processing chambers for use in the production of semiconductors, etc. or on members for use in radiating insulating substrates for power devices.

In the member coated with aluminum nitride by thermal spraying, a thermal-spraying deposit is formed on at least part of a base, and particles of a thermal-spraying deposit is constituted of fine aluminum nitride particles which are nearly spherical and have a diameter of 1 to 10 m on the average, and the member is characterized in that interstices among the aluminum nitride particles are filled with a Group IIIA and/or Group IIA element compound, and that the deposit has a porosity of 15%. This member can be produced by conducting thermal spraying with an aluminum nitride powder having an average particle diameter of 1 to 10 m or with a powder mixture obtained by incorporating a Group IIIA and/or Group IIA element compound into the same aluminum nitride powder.