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Title:
MEMBER FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SAME
Document Type and Number:
Japanese Patent JP2007116139
Kind Code:
A
Abstract:

To provide a new member for a semiconductor light-emitting device, the member having high transparency, light resistance, and thermal resistance and capable of sealing the semiconductor light-emitting device and holding a phosphor without causing cracks or exfoliation even over extended periods of use.

(1) A functional group is provided which is present on a ceramic or metallic surface and can be hydrogen bonded to a hydroxyl group or oxygen in a metalloxane bond and (2) 80% to 110% of the transmittance of light having a wavelength of 400 nm is kept before and after the functional group is left at 200°C for 500 hours. (3) After light having the center wavelength of 400 nm to 450 nm and a wavelength longer than 385 nm but not longer than 500 nm is radiated for 24 hours such that the illuminance is 4,500 W/m2 at the wavelength of 436 nm, a change is not visually recognized and (4) light having a wavelength of 550 nm has an index of refraction of 1.45 or higher.


Inventors:
KATOU HANAKO
MORI HIROSHI
KOBAYASHI HIROSHI
TONOMURA TASUKU
YAMAZAKI MASANORI
ABE MARI
Application Number:
JP2006256973A
Publication Date:
May 10, 2007
Filing Date:
September 22, 2006
Export Citation:
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Assignee:
MITSUBISHI CHEM CORP
International Classes:
H01L33/06; C08G77/04; C08G79/00; C09K11/06; H01L33/10; H01L33/32; H01L33/50; H01L33/54; H01L33/56; H01L33/60; H01L33/62
Domestic Patent References:
JP2005146042A2005-06-09
JP2004091763A2004-03-25
JP2001119067A2001-04-27
JP2000044807A2000-02-15
JPH05156426A1993-06-22
JPS56151732A1981-11-24
JPH0489871A1992-03-24
JP2004221186A2004-08-05
JP2004162039A2004-06-10
JP2005022899A2005-01-27
JP2005203737A2005-07-28
JP2005203737A2005-07-28
Foreign References:
WO2006090804A12006-08-31
Attorney, Agent or Firm:
Yu Sanada