PURPOSE: To make a memory into large capacity by outputting an information signal on which an error correction code is attached read out from a semiconductor memory after performing error correction by using the error correction code.
CONSTITUTION: This device is comprised in such a way that write data in which the error correction code is attached on the information signal by error correction coding processing 3a is recorded on the semiconductor memory 1a, and when a stored information signal is taken out from the semiconductor memory 1a, a bit error due to the memory shell defect of the information signal, etc., is compensated at an error correction circuit 4, and reproduced readout data can be outputted. In such a way, it is possible to inexpensively form the semiconductor memory having sufficient memory capacity to record a large number of digital still picture signals.
JP2003030991 | MEMORY |
JPH0778481 | DIRECT CURRENT SUM BANDGAP VOLTAGE COMPARATOR |
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