MEMORY DEVICE - Samsung Electronics Co.,Ltd.

Title:

MEMORY DEVICE

Document Type and Number:

Japanese Patent JP3958185

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a memory device of which a state of a terminal can be varied in an optimum state in accordance with variation of process, voltage, and temperature.
SOLUTION: This device is provided with terminals comprising variable resistor circuits respectively and passing through external signals for operating memory devices respectively, and a control circuit outputting a control signal controlling a resistance value included in the variable resistor circuit in accordance with a command enable-signal indicating activation of auto-refresh operation of a memory device and an external enable-signal for activating a delay synchronism loop circuit. After a state of a terminal is changed to an optimum state by a control signal, the delay synchronism loop circuit is enabled, also, a state of a terminal is changed to an optimum state by a control signal while the memory device performs auto-refresh operation periodically. Therefore, as an external signal is received after a terminal state is changed to an optimum state in accordance with process, voltage, and temperature, input/output characteristics of the memory device can be improved. Also, as a terminal state is optimized using the existing instruction being not a newly added instruction, performance of the memory device can be improved.

Inventors:

Zhang Xinzhen

Application Number:

JP2002307089A

Publication Date:

August 15, 2007

Filing Date:

October 22, 2002

Export Citation:

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