Title:
メモリ素子
Document Type and Number:
Japanese Patent JP6888783
Kind Code:
B2
Abstract:
A memory element includes a free magnetization layer (“FR-ML”) in a film form, a nonmagnetic layer (“NML”), and a fixed magnetization layer (“FX-ML”), The NML and FX-ML are stacked on the FR-ML. The FR ML stores a single bit of data “0” or “1” according to a magnetization direction and rewrites the data by reversing the magnetization direction. An antiferromagnet that exhibits the anomalous Hall effect and has a reversible magnetization direction is used for the FR-M. The reversal of the magnetization direction of the FR-ML is performed using the FX-ML by the spin-transfer torque technique. To read data, a reading current is caused to flow in one direction, and a Hall voltage generated in the FR-ML by the anomalous Hall effect is extracted from the FR-ML. The polarity of the Hall voltage is reversed in accordance with the magnetization direction of the FR-ML.
Inventors:
Middle Tsuji Knowledge
Application Number:
JP2017530866A
Publication Date:
June 16, 2021
Filing Date:
July 25, 2016
Export Citation:
Assignee:
National University Corporation Tokyo University
International Classes:
H01L21/8239; G11C11/16; H01F10/12; H01F10/32; H01L27/105; H01L29/82
Domestic Patent References:
| JP2009152594A | ||||
| JP2001084756A | ||||
| JP2003069107A | ||||
| JP2009514193A | ||||
| JP2014045196A | ||||
| JP2013069865A | ||||
| JP2007329492A | ||||
| JP2010045387A | ||||
| JP2010263221A | ||||
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Foreign References:
| WO2009133744A1 |
Attorney, Agent or Firm:
Masayoshi Yoshida
Hiromitsu Imaeda
Umemura Hiroaki
Yasuko Yoshida
Hiromitsu Imaeda
Umemura Hiroaki
Yasuko Yoshida