Title:
MEMORY SYSTEM
Document Type and Number:
Japanese Patent JP2020047337
Kind Code:
A
Abstract:
To provide a memory system to improve processing capacity.SOLUTION: According to the embodiment, a memory system includes a semiconductor storage device 100 and a controller 200. The semiconductor storage device 100 includes a plurality of memory cells MC that can store at least first to third data and a word line WL. The first data is determined by a first reading operation including a first reading level, the second data is determined by a second reading operation including a second reading level, and the third data is determined by a third reading operation including a third reading level. The controller 200 causes the semiconductor storage device 100 to execute a fourth reading operation including the first and second reading level in searching operations of first to third reading voltages respectively corresponding to the first to third reading levels.SELECTED DRAWING: Figure 11
Inventors:
SHIRAKAWA MASANOBU
TOKUTOMI TSUKASA
TAKADA MARIE
TOKUTOMI TSUKASA
TAKADA MARIE
Application Number:
JP2018174146A
Publication Date:
March 26, 2020
Filing Date:
September 18, 2018
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
G11C16/26; G11C11/56; G11C16/04; H01L21/336; H01L27/11573; H01L27/11582; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken