Title:
金属錯体、組成物、レジスト材料、パターン形成方法及び電子デバイスの製造方法
Document Type and Number:
Japanese Patent JP7151943
Kind Code:
B2
Abstract:
The present invention provides a resist material that can be used in radiation lithography and is capable of forming fine patterns while maintaining high sensitivity. Specifically, the present invention provides a metal complex characterized by having an anion compound (A) represented by general formula (1) as a ligand. (In the formula, R1 and R2 each represent a C1-9 aliphatic hydrocarbon group, an alkoxy group, an aryl group, an aralkyl group, or a halogen atom. m, n, and p each represent an integer from 0 to 4. R3 represents a hydrogen atom, a C1-9 aliphatic hydrocarbon group, or a structural moiety that has one or more substituents on a hydrocarbon group, said one or more substituents being selected from an alkoxy group, a halogen group, and a hydroxyl group. R4 represents a hydroxyl group, a C1-9 aliphatic hydrocarbon group, an alkoxy group, or a halogen atom.)
Inventors:
Tomoyuki Imada
Hirohito Nagata
Hirohito Nagata
Application Number:
JP2022532642A
Publication Date:
October 12, 2022
Filing Date:
October 07, 2021
Export Citation:
Assignee:
DIC Corporation
International Classes:
C07C65/105; C07F7/00; C07F7/22; G03F7/004; G03F7/20
Domestic Patent References:
| JP2008209473A | ||||
| JP10273461A |
Foreign References:
| WO2016140057A1 |
Attorney, Agent or Firm:
Takayuki Ohno
Akihiro Iwamoto
Hidefumi Sugaya
Niwa Masahiro
Akihiro Iwamoto
Hidefumi Sugaya
Niwa Masahiro