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Patent Searching and Data


Title:
METAL OXIDE SEMICONDUCTOR THIN FILM AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2003179242
Kind Code:
A
Abstract:

To find a semiconductor manufacturing method of quickly, cheaply and massively manufacturing a semiconductor having a large area, as attention is given in the aspects of reducing an environmental load and providing clean generation or energy saving to the technology for manufacturing solar cells, light emitting elements and other certain kinds of semiconductor devices each having a large area and a low cost.

The method of manufacturing a semiconductor thin film comprises a step of coating a substrate with organic molecules containing both anion atoms an cation atoms of a semiconductor as constituent components by various methods such as spraying, dipping, spin coating and evaporating, and heating to react them, resulting in p-type and n-type semiconductors with a p-n junction formed therebetween. Thus, semiconductor devices, light emitting elements or solar cells having large areas can be quickly and massively manufactured at low costs. The substrate may use metal, ceramic, glass, heat-resistive plastic, and other possible substances durable at sintering temperatures, and semiconductor devices, light emitting elements or solar cells can be directly assembled on possible constructions such as roofs, walls, etc., possible structures such as cars and aircraft, or other possible substances.


Inventors:
IWATA HIROYA
Application Number:
JP2001378118A
Publication Date:
June 27, 2003
Filing Date:
December 12, 2001
Export Citation:
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Assignee:
NAT INST OF ADV IND & TECHNOL
International Classes:
H01L21/365; H01L31/0296; H01L31/04; H01L31/18; H01L33/28; H01L21/16; H01L21/368; (IPC1-7): H01L31/04; H01L21/365