Title:
METAL PLATING DEVICE
Document Type and Number:
Japanese Patent JPS60228697
Kind Code:
A
Abstract:
PURPOSE:To prevent local variance in plating thickness with a metal plating device which deposits a metallic film on a semiconductor substrate by bringing an electrode into face contact with the semiconductor substrate and performing plating. CONSTITUTION:Not the conventional spot electrode but the flat plate electrode having the same or slightly smaller diameter as or than the diameter of the semiconductor substrate to be plated is used for the electrode 1 on the cathode side of the gushing type metal plating device for the semiconductor substrate. The electrode 1 is installed in the upper aperture position of a plating cell M so as to face an anode electrode 4. The substd. use of the semiconductor substrate 3 as the electrode 1 is possible by superposing the semiconductor substrate deposited with the metal over the entire surface on the conventional device of the spot electrode type. The substrate 3 with the surface to be plated faced downward is mounted to the upper part of the cell M of such plating device and the electrode 1 is brought into face contact with the rear of the plate 3. Electric current is thereafter passed from the electrode 4 to the plate 3 via a plating liquid 2 and plating is executed to a desired thickness, then the current flowing to the plate 3 is made uniform by the electrode 1 and the deposition of the uniform film is made possible.
Inventors:
KOBAYASHI TAKAAKI
KOUNO HIROMICHI
KOUNO HIROMICHI
Application Number:
JP8443484A
Publication Date:
November 13, 1985
Filing Date:
April 26, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C25D7/12; C25D17/10; C25D17/12; (IPC1-7): C25D7/12; C25D17/12
Attorney, Agent or Firm:
Sugano Naka
Previous Patent: PLATING METHOD OF AGE HARDENING TYPE COPPER ALLOY MEMBER
Next Patent: PRODUCTION OF MOLYBDENUM OXIDE FILM
Next Patent: PRODUCTION OF MOLYBDENUM OXIDE FILM