METAL POLISHING SOLUTION AND POLISHING METHOD

Title:

METAL POLISHING SOLUTION AND POLISHING METHOD

Document Type and Number:

Japanese Patent JP2004311565

Kind Code:

A

Abstract:

To provide a metal polishing solution which enables a metal wiring unit having a width of 100 μm or above to be less dished and corroded so as to form the embedded pattern of a metal film of high reliability, and to provide a polishing method using the same.

The polishing solution contains a metallic oxidizing agent, a metal oxide dissolving agent, an agent for forming a protective film for a metal surface, and water. The polishing water solution containing no metallic oxidizing agent has conductivity of 0.5 to 5.0 mS/cm. By the use of the polishing solution, the semiconductor integrated circuit can be improved in degree of integration and throughput through both the formation of the embedded interconnect lines having excellent electrical properties and a proper polishing rate.

Inventors:

ENOMOTO KAZUHIRO
KURATA YASUSHI
KAMIGATA YASUO

Application Number:

JP2003100216A

Publication Date:

November 04, 2004

Filing Date:

April 03, 2003

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI CHEMICAL CO LTD

International Classes:

B24B37/00; C09K3/14; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; C09K3/14

Attorney, Agent or Firm:

Hidekazu Miyoshi
Yasuo Miyoshi
Iwa Saki Kokuni
Akira Kurihara
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu

Previous Patent: HEATING CONTROL/REGULATE METHOD, HEAT TREATMENT UNIT AND HEAT TREATMENT SYSTEM

Next Patent: SEMICONDUCTOR MANUFACTURING DEVICE