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Patent Searching and Data


Title:
METAL PROTRUSION FORMING SUBSTRATE AND ITS MANUFACTURE AND TRANSFER
Document Type and Number:
Japanese Patent JPH0499342
Kind Code:
A
Abstract:

PURPOSE: To enable cost to be reduced by constituting a position corresponding to an electrode of a semiconductor element on a substrate with a first transparent conductive film, a first titanium film, and a second transparent conductive film and other regions with the first transparent conductive film, a first titanium film oxide, and a first light-sensitive insulation resin.

CONSTITUTION: An ultraviolet rays 7 is emitted from a rear surface of a transparent insulation substrate 1. At this time, the ultraviolet rays 7 is transmitted through a transparent titanium oxide 5 but is not transmitted through a titanium 3. Therefore, when a negative type photoresist 6 is developed, the photoresist 6 on a transparent conductive type film 4 is eliminated and the photoresist 6 remains only on the titanium oxide 5. Then, the resist 6 is masked and a metal protrusion 8 is formed selectively on the transparent conductive film 4 by electrolytic plating with a transparent conductive film 2 as one electrode. A metal protrusion forming mask can be produced only by light-exposure over an entire surface from a surface without photo mask and repetitive formation of the metal protrusion can be performed easily.


Inventors:
KAWAKITA TETSUO
HATADA KENZO
Application Number:
JP21744290A
Publication Date:
March 31, 1992
Filing Date:
August 17, 1990
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/60; (IPC1-7): H01L21/60
Attorney, Agent or Firm:
Tomoyuki Takimoto