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Title:
METALLIC LIGHT BARRIER FOR PHOTODETECTOR ALSO SERVING AS INTERCONNECTION ELECTRODE
Document Type and Number:
Japanese Patent JP3694655
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To decrease the number of masking steps and to use a W layer for connecting an ITO with earth or a bias.
SOLUTION: The number of masking steps required for connecting a feedback photocurrent with the earth or a bias potential (38) can be decreased by collecting prior art steps and rearranging them as follows. (A). A P layer (17) of hydrogen added amorphous silicon (a-Si:H) is deposited on the lower layer (20) of an intrinsic hydrogen added amorphous silicon and a conductive ITO layer (18) is deposited on the P layer. (B). All three layers deposited at step (A) are patterned. (C). A W layer (19) functioning as a light barrier is deposited and patterned. The steps (A)-(C) are required only twice as compared with a prior art masking step required three times. The W layer can be used for connecting the ITO with the earth or the bias potential.


Inventors:
David W. Hula
Application Number:
JP2001124296A
Publication Date:
September 14, 2005
Filing Date:
April 23, 2001
Export Citation:
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Assignee:
AGILENT TECHNOLOGIES, INC.
International Classes:
H01L27/146; H01L27/14; H01L27/144; H01L31/0216; H01L31/10; H01L31/18; H01L31/0224; H01L31/105; (IPC1-7): H01L27/146; H01L27/14; H01L31/10
Domestic Patent References:
JP59080964A
JP2166769A
JP63275167A
Attorney, Agent or Firm:
Kaoru Furuya
Takahiko Mizobe
Satoshi Furuya