Title:
III族窒化物半導体レーザ素子を作製する方法
Document Type and Number:
Japanese Patent JP5099255
Kind Code:
B1
Abstract:
A method for fabricating a group-III nitride semiconductor laser device stably supplies laser cavity mirrors having a low lasing threshold current through the use of a semi-polar plane. A blade 5g is forced down through a first region ER1 to keep the first region ER1 squeezed between a support member H2 and a movable member H1 together with a part of a protective sheet TF in contact with the first region ER1 while the tension generated in the area of the protective sheet TF in contact with the first region ER1 with the movable member H1 increases until the semi-polar principal surface SF at an end face EG1 of the first region ER1 tilts by a deflection angle THETA from the semi-polar principal surface SF of a second region ER2, and a force is thereby generated in the first region ER1 in a direction opposite to the direction of travel of the blade 5g toward the first region ER1. For example, an angle ALPHA is within the range of 71 degrees to 79 degrees, and the deflection angle THETA is within the range of 11 to 19.
Inventors:
Shinpei Takagi
Application Number:
JP2011199682A
Publication Date:
December 19, 2012
Filing Date:
September 13, 2011
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01S5/343; H01S5/02
Domestic Patent References:
| JP4475357B1 | ||||
| JP2001230497A | ||||
| JP200981336A | ||||
| JP4971508B1 |
Foreign References:
| WO2011077852A1 | ||||
| WO2011077856A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichira Kondo
Yoshiki Kuroki
Ichira Kondo