Title:
METHOD FOR ANALYZING SURFACE LAYER OF SILICON WAFER
Document Type and Number:
Japanese Patent JPH1137992
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an analysis method capable of etching uniformly a surface of silicon wafers and evaluating metal impurities of a surface layer of the silicon wafers with high sensitivity and high precision. SOLUTION: An analysis face 15 of a silicon wafer 13 is confronted to a mixed solution 12 of hydrofluoric acid and nitric acid (hydrochloric acid is added as occasion demands), and the silicon wafer is heated from a reverse side of the analysis face 15, and vapor is generated from the mixed solution 12 by the heat and the analysis face 15 is etched by this vapor and a thin film of a silicofluoride is produced on a surface of the analysis face and the produced thin film of a silicofluoride is melted, and based thereon, a metal impurity amount is measured.
Inventors:
ABE HIDEKO
TOKUTAKE FUMIO
TOKUTAKE FUMIO
Application Number:
JP20739097A
Publication Date:
February 12, 1999
Filing Date:
July 17, 1997
Export Citation:
Assignee:
TOSHIBA CERAMICS CO
International Classes:
G01N33/00; G01N1/28; (IPC1-7): G01N33/00
Attorney, Agent or Firm:
Toru Tanabe