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Title:
METHOD AND APPARATUS FOR ABATEMENT OF TOXIC GAS COMPONENT FROM SEMICONDUCTOR MANUFACTURING PROCESS EFFLUENT STREAM
Document Type and Number:
Japanese Patent JP2006061906
Kind Code:
A
Abstract:

To provide an apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process.

This apparatus comprises a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent flows through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, Co3O4, ZnO, MnO2 and mixtures thereof.


Inventors:
SWEENEY JOSEPH D
MARGANSKI PAUL J
OLANDER W KARL
Application Number:
JP2005244617A
Publication Date:
March 09, 2006
Filing Date:
August 25, 2005
Export Citation:
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Assignee:
APPLIED MATERIALS INC
International Classes:
B01D53/46; B01D53/04; B01D53/34
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada