Title:
異方性パターンエッチングおよび処理のための方法および装置
Document Type and Number:
Japanese Patent JP7254791
Kind Code:
B2
Abstract:
Methods and apparatuses for providing an anisotropic ion beam for etching and treatment of substrate are discussed. In one embodiment, a system for processing a substrate includes a chamber, a chuck assembly, an ion source, and a grid system. The ion source includes grid system interfaces both the chamber and the ion source and includes a plurality of holes through which ions are extracted from the ion source to form an ion beam. The grid system is oriented so the ion beam is directed into the chamber toward the substrate support, and the array of holes of the grid system is defined vertically by a y-axis and horizontally by an x-axis, The array of holes is defined by hole densities that vary vertically in the y-axis such that the ion beam is caused to have an energy density gradient that is defined vertically in the y-axis.
Inventors:
Yoon Seok Min
Huang Shuogan
Wang Jimin
Merrill Mark
Huang Shuogan
Wang Jimin
Merrill Mark
Application Number:
JP2020525870A
Publication Date:
April 10, 2023
Filing Date:
November 02, 2018
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H01J37/305; H01L21/302
Foreign References:
| WO2014069094A1 | ||||
| US20050001177 |
Attorney, Agent or Firm:
Patent Attorney Corporation Meisei International Patent Office