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Title:
METHOD AND APPARATUS FOR EXTRACTING ION USED FOR ION IMPLANTATION FROM ION SOURCE
Document Type and Number:
Japanese Patent JP2014053319
Kind Code:
A
Abstract:

To prevent formation of a deposit to an electrode and unstable operation, to use ion generated from condensable steam and to use an ion source which performs low-temperature operation and high-temperature operation.

During low-temperature operation of an ion source 400, an extraction electrode 405 is heated and during high-temperature operation, the extraction electrode 405 is cooled. Temperature control is performed on the extraction electrode 405 so as to reduce deposition of condensible gas such as sublimation steam. A remote plasma source 455 supplies F ion or Cl ion to the powered-off ion source 400 and performs in-situ etching clarification in order to clarify deposits on the ion source 400 and the extraction electrode 405. When using condensible gas such as sublimation steam or when using decaborane or octa-decaborane as a supply material and using evaporated unit arsenic or phosphorous, a facility available time is prolonged, system lifetime is prolonged, and beam stability in ion implantation is enhanced by the technologies.


Inventors:
THOMAS N HORSKY
ROBERT W MILGATE
SACCO GEORGE P
KRULL WADE ALLEN
Application Number:
JP2013229239A
Publication Date:
March 20, 2014
Filing Date:
November 05, 2013
Export Citation:
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Assignee:
SEMEQUIP INC
International Classes:
H01J27/02; C23C14/48; H01J7/24; H01J37/08; H01J37/317; H01J
Domestic Patent References:
JPH01246747A1989-10-02
JPS63254639A1988-10-21
JP2000113849A2000-04-21
JPH0648159U1994-06-28
Foreign References:
WO2005059942A22005-06-30
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Yukio Kanegae