Title:
METHOD AND APPARATUS FOR FORMATION OF SEMICONDUCTOR DIAMOND
Document Type and Number:
Japanese Patent JP3165536
Kind Code:
B2
Abstract:
PURPOSE: To achieve that an impurity chemical element which forms a donor level and an acceptor level is introduced into a diamond with good controllability and to form a p-type semiconductor diamond and an n-type semiconductor diamond by a method wherein, while a diamond or a diamond thin film which has been deposited on a substrate blank is being irradiated with accelerated particles, it is exposed to an atmosphere containing hydrogen in a radical state or an ion state.
CONSTITUTION: A diamond 1 is mounted on a substrate-holding stand 7, a vacuum is produced, boron ions (B+) which have been taken out from an ion source, as particles 2, are accelerated at 100keV, and, while the diamond 1 is being irradiated at 1×1015pieces/cm2, it is irradiated simultaneously with hydrogen ions at an ion current density of 0.01 to 0.1mA/cm2 from a bucket-type ion source 14. Boron atoms are implanted into a region of about 0.3μm in the surface layer of the diamond 1, and a p-type semiconductor layer 4 which is not damaged and in which boron has been activated can be formed. When phosphorus ions are irradiated in the same manner, an n-type semiconductor diamond layer can be formed.
Inventors:
Masahiro Deguchi
Makoto Kitabatake
Takashi Hirao
Makoto Kitabatake
Takashi Hirao
Application Number:
JP30213092A
Publication Date:
May 14, 2001
Filing Date:
November 12, 1992
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C30B29/04; H01L21/04; H01L21/205; H01L21/265; (IPC1-7): H01L21/265; C30B29/04; H01L21/205
Domestic Patent References:
| JP517291A | ||||
| JP620982A | ||||
| JP5213695A | ||||
| JP5229896A | ||||
| JP648715A | ||||
| JP3257098A | ||||
| JP60195094A |
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)