PURPOSE: To form a thin film of amorphous silicon hydride having a high dark resistance and also a high photoconductivity by a reactive sputtering method.
CONSTITUTION: A pair of magnetron electrodes 7 and 8 connected to a DC power source 10 and a high-frequency power source 11 respectively are provided in a vacuum chamber 2 and silicon targets 9 are provided on the electrodes 7 and 8 respectively. When DC magnetron sputtering and high-frequency magnetron sputtering are conducted simultaneously by the electrodes 7 and 8 while an inactive gas containing hydrogen is made to flow from a gas introducing port 4, amorphous silicon films having different forms of combination of Si-H are deposited on a substrate 12. The forms of combination can be controlled by varying the ratio between a DC sputtering output and a high-frequency sputtering output by the electrodes 7 and 8.
SHIBATA TAKASHI
TOKUSHIGE HIROYUKI
