METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR ELEMENT

Japanese Patent JP2011040564

A

To provide a method and an apparatus for manufacturing a semiconductor element that peel a thin layer including crystal for the semiconductor element from a growth substrate using laser irradiation.

The method for manufacturing the semiconductor element includes a process of peeling the thin film including the crystal for the semiconductor element from the growth substrate by irradiating the growth substrate having the crystal for the semiconductor element formed on a first principal surface with laser light, converging the laser light on a predetermined position in the crystal for the semiconductor element or in the growth substrate, and moving the laser light in a direction parallel to the first principal surface, the wavelength of the laser light being longer than an absorption-end wavelength of the crystal for the semiconductor or growth substrate in which the laser light is converged.

JP3166643	MANUFACTURING DEVICE OF LASER BEAM WELDED TUBE AND MANUFACTURE OF LASER BEAM WELDED TUBE
JP3387990	LASER BEAM MACHINE
JP6440558	Processing method of work piece

ANDO MASANOBU
KITA TORU
GOTODA TORU

JP2009186535A

February 24, 2011

August 11, 2009

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TOSHIBA CORP

B23K26/00; H01L33/32; B23K26/046; B23K26/08; B23K26/38; B23K26/40; H01L33/06; H01S3/00; B23K101/40

JP2006298752A	2006-11-02
JP2003338636A	2003-11-28
JP2004072052A	2004-03-04
JP2006245043A	2006-09-14
JP2005169397A	2005-06-30
JP2007123858A	2007-05-17
JP2006024782A	2006-01-26
JP2007057622A	2007-03-08

Masahiko Hinataji

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