PURPOSE: To form a semiconductor layer on an electrode layer in good yield, by a method wherein an electrode layer is formed and a semiconductor material is deposited on the electrode layer in a same vacuum system to eliminate the adhesion of dust.
CONSTITUTION: While a base plate 11 is sent between rolls 9, 10, an electrode material is evaporated at first from an evaporation source in a vacuum vapor deposition chamber 2 and an electrode layer 20 is deposited on the base plate 11 in a predetermined thickness. The base plate 11 having the electrode layer is succeedingly transferred and a semiconductor material and a dopant are evaporated from evaporation sources 3, 4 in the next vacuum evaporation chamber 5 and, at the same time, a modifying gas is introduced from an introducing pipe 16. By this method, because the electrode material is deposited on the base plate in a same vacuum system and the next depositing treatment of the semiconductor is material succeedingly carried out, there is almost no fear of causing adhesion of dust.
OOTA TATSUO
SATOU SHIGERU
MIYOUKAN ISAO
SHIMA TETSUO
Next Patent: METHOD AND APPARATUS FOR FORMING SEMICONDUCTOR LAYER