To cause a projection optical system PL to keep to have the same performance as in an ideal environment, by irradiating a pattern on a reticle irradiated with an illumination optical system on a board with a beam of a specific numeric aperture and arranging a projection optical system satisfying a specific condition between the reticle and the board.

The projection optical system PL forms an image of a reticle R on a wafer W. The projection optical system PL which projects a beam having at least a numeric aperture of 0.55 satisfies conditions (1) and (2). (1) dSAp<0.3×λ/(NA)2, (2) dCOMAp<0.3×λ/(NA)2. Here, dSAp is the variation of the spherical abberation by a beam of the maximum numerical aperture of the optical system PL, when the atmospheric pressure of the atmosphere in the periphery of the projection optical system PL changes by 30mmHg, dCOMAp is the variation of the comatic abberation by a beam of the maximum numerical aperture at the maximum image height of the optical system PL, when the atmospheric pressure of the atmosphere in the periphery of the optical system PL changes by 30mmHg, and NA is the numerical aperture of the projection optical system PL.