PURPOSE: To prevent the corrosion in washing to obtain a reliable metallic wiring pattern by performing the washing in ultrapure water using deoxidated water after formation of the wiring pattern.
CONSTITUTION: Al-Si-Cu alloy film is formed on the surface of a semiconductor substrate, and then a resist pattern is formed, and using Cl gas, etching is performed with the resist pattern as a mask, and hot blast treatment is performed to remove residual Cl on the surface of a substrate. Subsequently, with a washing device 16, ultrapure water, from a ultrapure water guide pipe 37, and hydrogen gas, from a hydrogen gas introduction pipe 36, are introduced, and are led to a catalyst resin charge tower 40 filled up with catalyst 39 for performing deoxidation treatment, and the deoxidated ultrapure water 38 is poured through an introduction pipe 35 onto the substrate rotating being sucked so as to wash it. And the entire processor is screened from light, and the entire room, where the substrate to be treated is placed, is screened from light so that the substrate to be processed may not be irradiated with light. Moreover, the quantity of Cu added to Al-Si is 0.1-0.4%.
KOGA YURI
OKANO HARUO
YOSHIDA YUKIMASA
MABUCHI SAKURAKO
