Title:
METHOD AND APPARATUS FOR TREATING PLASMA
Document Type and Number:
Japanese Patent JP2002367967
Kind Code:
A
Abstract:
To provide a plasma treatment method for removing electrification being generated on a substrate by etching treatment, and to provide a plasma treatment apparatus.
A nitrogen or an oxygen gas is introduced by a gas supply apparatus 18, pressure in a vacuum container 1 is adjusted to 10 Pa, and a substrate 2 is lifted by approximately 1 mm by a small projection mechanism while high-frequency power with low power being 50 W or more is being applied, thus stably generating discharge via a creeped released electrons and ions between a substrate back and an electrode front 6a, neutralizing residual charge between both of them, and hence reducing particle adhesion due to the residual charge after plasma treatment.
Inventors:
NAKAMURA YOSHIHIRO
SUZUKI MASAKI
YOSHIDA YOSHIHIRO
SUZUKI MASAKI
YOSHIDA YOSHIHIRO
Application Number:
JP2001171995A
Publication Date:
December 20, 2002
Filing Date:
June 07, 2001
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/205; H01L21/3065; (IPC1-7): H01L21/3065; H01L21/205
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)
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