Title:
METHOD FOR CHEMICAL VAPOR DEPOSITION OF ORGANIC METAL
Document Type and Number:
Japanese Patent JPH06248453
Kind Code:
A
Abstract:
PURPOSE: To provide the novel method using an additive at the time of forming metals, alloys, ceramics and semiconductors by the method for chemical vapor deposition of org. metals.
CONSTITUTION: Reaction is effected by adding gaseous nitrogen trifluoride for accelerating reaction to the gaseous org. metallic raw materials consisting of components of respective materials in the above-mentioned method for forming the materials by the method for chemical vapor deposition of org. metals. The amt. thereof is controlled to ≤5% of the total amt. of the gas to be used for the reaction so that the formation of the materials is accelerated. As a result, the material formation is speeded up and the temp. thereof is lowered.
Inventors:
FURUKAWA YOSHITAKA
NODA YASUTOSHI
NODA YASUTOSHI
Application Number:
JP5653893A
Publication Date:
September 06, 1994
Filing Date:
February 22, 1993
Export Citation:
Assignee:
NODA YASUTOSHI
FURUKAWA YOSHITAKA
FURUKAWA YOSHITAKA
International Classes:
C23C16/18; H01L21/205; H01L21/365; (IPC1-7): C23C16/18; H01L21/205; H01L21/365