Title:
METHOD OF CLEANING HYDROGEN-PLASMA DOWN-FLOW APPARATUS AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3533583
Kind Code:
B2
Abstract:
PURPOSE: To manufacture a semiconductor device efficiently by a method wherein the plasma of a gas which contains hydrogen is generated in a plasma generation part, its down-flow is guided to a treatment chamber and a gas flow passage is cleaned.
CONSTITUTION: A gas introduction means 2 which introdues hydrogen H2 and water vapor H2O and an evacuation means 3 are connected to both ends of a quartz tube 1 as a gas flow passage whose main part on the inside is formed of SiO2. Then, the hydrogen H2 and the water vapor H2O are introduced from the gas introduction means 2, microwaves are sent out from a microwave cavity 43, a plasma is generated by a plasma generation means 44, its down-flow is guided to a treatment part 7, and the inside of the quartz tube 1 is cleaned. Thereby, it is possible to manufacture a semiconductor device stably in a good state.
Inventors:
Kikuchi, Jun
Fujimura, Shuzo
Fujimura, Shuzo
Application Number:
JP17294394A
Publication Date:
May 31, 2004
Filing Date:
July 25, 1994
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/302; B08B7/00; H01L21/304; H01L21/3065; H01L21/31; (IPC1-7): H01L21/3065; H01L21/31
Attorney, Agent or Firm:
高橋 敬四郎
Previous Patent: EQUIPMENT AND METHOD OF CONVEYING SEGMENT
Next Patent: FEEDING BOTTLE STERILIZING CONTAINER FOR MICROWAVE OVEN
Next Patent: FEEDING BOTTLE STERILIZING CONTAINER FOR MICROWAVE OVEN