Title:
METHOD FOR CLEANING MICROWAVE PLASMA DEVICE
Document Type and Number:
Japanese Patent JP3404434
Kind Code:
B2
Abstract:
PURPOSE: To shorten the deposit removing time, to enhance the reproducibility of a removing effect and to improve the working rate of the plasma device by introducing a specified gas into a vacuum treating chamber to plasma-clean the chamber.
CONSTITUTION: A vacuum chamber 10 of the device provided with the vacuum chamber 10 supplied with a processing gas and kept at a specified pressure, a microwave source 18 to introduce the microwave into the chamber 10, a waveguide 17 and an evacuating mechanism 16 is cleaned as follows. Namely, O2, Ar, He, Xe, Cl, SF6 or NF3 or their mixture is introduced from a gas feed port 15 to produce plasma by which the chamber is cleaned. One or plural sheets of the sample 13 are appropriately selected and cleaned, and the plasma is moved and approached to the severely contaminated region. Consequently, the C of the contaminant is removed as the oxide and inorg. matter such as Ti, W and Al as the chloride or fluoride.
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Inventors:
Yoshiaki Sato
Kotaro Fujimoto
Kanekiyo Nimitsu
Go Yoshida
Kotaro Fujimoto
Kanekiyo Nimitsu
Go Yoshida
Application Number:
JP22297794A
Publication Date:
May 06, 2003
Filing Date:
September 19, 1994
Export Citation:
Assignee:
株式会社日立製作所
株式会社日立ハイテクノロジーズ
株式会社日立ハイテクノロジーズ
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C23F4/00; H01L21/3065
Domestic Patent References:
| JP375373A | ||||
| JP590180A | ||||
| JP5339735A | ||||
| JP547712A |
Attorney, Agent or Firm:
Kenjiro Take
Kenjiro Take (1 person outside)
Kenjiro Take (1 person outside)