Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD OF CLEANING SILICON SUBSTRATE
Document Type and Number:
Japanese Patent JPH04320335
Kind Code:
A
Abstract:

PURPOSE: To inhibit the adhesion of dust and dirt on the surface of a silicon wafer with regards to a method of cleaning the silicon wafer.

CONSTITUTION: Prior to device formation, a method of cleaning a silicon wafer 2 comprises a process of dipping a silicon wafer 2 and then a lower alcohol liquid 5 in a hydrofluoric acid aqueous solution and a process of cleaning the silicon wafer 2 by water washing under the condition where the surface of the wafer 2 is kept to be still wet by the lower alcohol liquid 5.


Inventors:
INABA MICHIKO
KOBAYASHI MASANORI
Application Number:
JP8881691A
Publication Date:
November 11, 1992
Filing Date:
April 19, 1991
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJITSU LTD
International Classes:
H01L21/304; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Sadaichi Igita