PURPOSE: To prevent the transfer of the fine chipping generated in a phase shifter as a defect to a wafer by embedding a light shielding material into the chipping part of the phase shifter.

CONSTITUTION: The photomask 1 for phase shift is a reticule formed with the original pictures of integrated circuit patterns of a size of, for example, 5 times the life size for the purpose of transferring the prescribed integrated circuit patterns to the semiconductor wafer and is constituted of a glass substrate 2, light shielding patterns 3a to 3e formed in the prescribed regions on the main surface thereof and the phase shifters 4a, 4b formed respectively between the light shielding patterns 3a and 3b as well as the light shielding patterns 3c and 3d. The light shielding material 6 is embedded in the chipping part 5 of the phase shifter 4b to prevent the transmission of light at this time. As a result, the quantity of the transmitted light merely decreases in the chipping part 5 and the phase thereof is the same as the phase of the light transmitted through the phase shifter 4b around this part. Since the stressing of the contrast is thereby prevented, the transfer of the chipping part 5 as the defect to the wafer is obviated.