To avoid the deterioration of the fidelity of a transfer image on a wafer by making it possible to correct a mask pattern so as to appropriately respond to the influence of an inclination, even in a case that the inclination has arisen on the pattern side wall which forms a mask pattern, with respect to the mask for exposure corresponding to an extremely short ultraviolet light.

A mask correction method concerning the mask for exposure carries out exposure transfer of the transfer image of a shape according to the mask pattern onto the wafer. An angle formed by a projection vector which projects an oblique incidence light on the mask surface and a mask pattern composition side, and corresponding relation between the angle of inclination of an absorption film side wall forming the composition side and the amount of the transfer image deformation or the pupil passage light volume for obtaining the transfer image, are specified beforehand. The angle of inclination of the side wall of the absorption film is recognized (S102), and the correction processing to the mask pattern is performed by using the correction amount which is determined for the correction amount to the mask pattern from the recognition result and the corresponding relation (S103).