Title:
多結晶Si含有膜の堆積方法
Document Type and Number:
Japanese Patent JP4728953
Kind Code:
B2
Abstract:
Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.
Inventors:
Todd Michael A.
Weeks Casey.
Weeks Casey.
Application Number:
JP2006513177A
Publication Date:
July 20, 2011
Filing Date:
April 21, 2004
Export Citation:
Assignee:
ASM America Inc.
International Classes:
H01L21/205; C23C16/22; C23C16/24; C23C16/30; C23C16/34; C23C16/455; C23C16/44; C23C16/56
Domestic Patent References:
| JP10214790A | ||||
| JP2002280309A | ||||
| JP2001250968A | ||||
| JP1268064A | ||||
| JP2004523885A | ||||
| JP5166729A | ||||
| JP2003092419A | ||||
| JP7321308A | ||||
| JP5021378A | ||||
| JP7283151A | ||||
| JP7307308A |
Attorney, Agent or Firm:
Fumihiko Yagisawa
Suzuki Masao
Suzuki Masao