METHOD FOR DEPOSITING THIN FILM BY SPUTTERING

Title:

METHOD FOR DEPOSITING THIN FILM BY SPUTTERING

Document Type and Number:

Japanese Patent JPS6250461

Kind Code:

A

Abstract:

PURPOSE: To deposit a thin film on the surface of a substrate so that the small recesses in the substrate are filled by carrying out bias sputtering in an atmosphere contg. a gaseous compound of the nongaseous constituent element of the thin film to be deposited.

CONSTITUTION: A tungsten plate or the like is used as a target 10 and high frequency power is supplied to the target 10 from a high frequency power source 11. High frequency power is supplied to a substrate holder 12 from other high frequency power source 13 to apply negative self-DC bias voltage to a substrate 14. Gaseous Ar mixed with about 50% gaseous tungsten hexafluoride or the like is used as a sputtering gas. By this sputtering method, a film 16 is deposited on the substrate 14 so that the micropores 15 in the substrate 14 are filled. The deposited film contains no void and the micropores are perfectly filled.

Inventors:

OKABAYASHI HIDEKAZU
MOGAMI TORU
NAGASAWA EIJI

Application Number:

JP18854985A

Publication Date:

March 05, 1987

Filing Date:

August 29, 1985

Export Citation:

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Assignee:

NEC CORP

International Classes:

C23C14/34; H01L21/203; H01L21/285; H01L21/31; (IPC1-7): C23C14/34; H01L21/203; H01L21/285; H01L21/31

Attorney, Agent or Firm:

Yoshiyuki Iwasa

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