Title:
METHOD FOR DEPOSITING THIN FILM
Document Type and Number:
Japanese Patent JP2007138253
Kind Code:
A
Abstract:
To provide a method which can be industrially satisfactorily utilized when a thin film is deposited by generating a discharge plasma by the use of a raw material gas containing a carbon source and by which the thin film having good quality can be obtained and the yield of the thin film can be remarkably enhanced.
When the thin film 7 is deposited on a substrate 6 by generating a discharge plasma by applying a pulse voltage to electrode 5 in an atmosphere containing the raw material gas A containing a carbon source, the continuing time of the pulse voltage is 10 to 1,000 nsec and the pressure is ≤50 Torr.
Inventors:
SAITO TAKAO
KONDO YOSHIMASA
KONDO YOSHIMASA
Application Number:
JP2005333868A
Publication Date:
June 07, 2007
Filing Date:
November 18, 2005
Export Citation:
Assignee:
NGK INSULATORS LTD
International Classes:
C23C16/515
Domestic Patent References:
| JP2004270022A | 2004-09-30 | |||
| JPH09104985A | 1997-04-22 | |||
| JPH1088359A | 1998-04-07 | |||
| JP2001181847A | 2001-07-03 |
Other References:
近藤好正, 斎藤隆雄, 今西雄一郎, 中村幸則, 細野慎太郎, 大竹尚登: "SIサイリスタを用いたナノパルス電源による大気圧下でのダイヤモンド状炭素膜成膜", SIデバイスシンポジウム講演論文集, vol. 17, JPN6010020586, 2 July 2004 (2004-07-02), pages 9 - 14, ISSN: 0001595005
Attorney, Agent or Firm:
Masumi Hosoda
Juno Aoki
Juno Aoki