Title:
METHOD FOR DEPOSITION OXIDE CERAMICS THIN FILM
Document Type and Number:
Japanese Patent JP2002155376
Kind Code:
A
Abstract:
To provide a method for depositing a high-quality oxide ceramic thin film on metal by using a high-temperature plasma containing oxygen.
An oxide ceramic thin film 7 is deposited on a Pt layer 4 by changing at least the oxygen flow rate in a deposition process, and to be concrete, by decreasing the oxygen flow rate in the initial stage of deposition and then increasing the above oxygen flow rate discontinuously or continuously; or an oxide ceramics thin film 27 is deposited on a Pt layer 24 by changing high-frequency input power in a deposition process, and to be concrete, by decreasing high-frequency input power in the initial stage of deposition and increasing the above high-frequency input power discontinuously or continuously.
Inventors:
IWASHITA SETSUYA
HIGUCHI AMAMITSU
MIYAZAWA HIROSHI
HIGUCHI AMAMITSU
MIYAZAWA HIROSHI
Application Number:
JP2000348504A
Publication Date:
May 31, 2002
Filing Date:
November 15, 2000
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H05H1/46; C23C16/40; C23C16/507; C23C26/00; (IPC1-7): C23C26/00; C23C16/40; C23C16/507; H05H1/46
Attorney, Agent or Firm:
Masanori Ueyanagi (1 outside)