To provide a method and device for evaluating adhesion of a pattern for quantitatively measuring the adhesion without generating a shear in the fine pattern, in evaluating the adhesion between the fine pattern, such as a resist pattern and a light shielding film pattern of a photomask used for producing semiconductors, and a base substrate.
In the method of evaluating adhesion of the pattern by measuring the adhesion of the pattern formed on the surface of a substrate by scanning while keeping a probe disposed on a cantilever of an atomic force microscope away from the surface of the substrate, the probe is configured with a base for installing the probe to the cantilever and a tip for contacting the pattern, and the base and the tip form a neck, wherein the base makes a continuous sloping face in the vertical direction from the cantilever toward the neck, and the tip has a shape in which the maximum width of the side contacting the side face of the pattern is the same width as the width of the neck or larger.
ABE MAKOTO
HATAKEYAMA SHO
| JP2007250699A | 2007-09-27 | |||
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Keiko Fukamachi
Hideo Ito
Hiromi Fujimasu
Naoki Goto